Method to form silicide and contact at embedded epitaxial facet

ABSTRACT

An integrated circuit with an MOS transistor abutting field oxide and a gate structure on the field oxide adjacent to the MOS transistor and a gap between an epitaxial source/drain and the field oxide is formed with a silicon dioxide-based gap filler in the gap. Metal silicide is formed on the exposed epitaxial source/drain region. A CESL is formed over the integrated circuit and a PMD layer is formed over the CESL. A contact is formed through the PMD layer and CESL to make an electrical connection to the metal silicide on the epitaxial source/drain region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Nonprovisional patentapplication Ser. No. 14/563,062, filed Dec. 8, 2014, which claims thebenefit of U.S. Provisional Application 61/914,995, filed Dec. 12, 2013,the contents of both of which are herein incorporated by reference inits entirety.

FIELD OF THE INVENTION

This invention relates to the field of integrated circuits. Moreparticularly, this invention relates to epitaxial regions of MOStransistors in integrated circuits.

BACKGROUND OF THE INVENTION

An integrated circuit may include a metal oxide semiconductor (MOS)transistor with epitaxial source/drain regions. For example, a p-channelmetal oxide semiconductor (PMOS) transistor may have silicon-germaniumepitaxial source/drain regions. An n-channel metal oxide semiconductor(NMOS) transistor may have phosphorus-doped silicon epitaxialsource/drain regions. An instance of the epitaxial source/drain regionsmay abut field oxide formed by a shallow trench isolation (STI) process.The epitaxial source/drain region may have a highly angled surface facetand a cavity between the epitaxial material and the dielectric materialof the field oxide.

A gate structure may be located on the field oxide adjacent to theepitaxial source/drain region so that dielectric spacer material on alateral surface of the gate structure may extend into the cavity anddown to the epitaxial material, reducing an area for metal silicide onthe epitaxial source/drain region. A contact disposed on the epitaxialsource/drain region may undesirably provide a high resistance connectionto the MOS transistor due to the reduced silicide area and possibly incombination with alignment tolerance of the contact to the source/drainregion.

SUMMARY OF THE INVENTION

The following presents a simplified summary in order to provide a basicunderstanding of one or more aspects of the invention. This summary isnot an extensive overview of the invention, and is neither intended toidentify key or critical elements of the invention, nor to delineate thescope thereof. Rather, the primary purpose of the summary is to presentsome concepts of the invention in a simplified form as a prelude to amore detailed description that is presented later.

An integrated circuit containing an MOS transistor abutting field oxideand a gate structure on the field oxide adjacent to a source/drainregion of the MOS transistor is formed by forming a patterned epitaxyhard mask layer over the MOS transistor and the gate structure on thefield oxide, which exposes the source/drain between the field oxide anda gate structure of the MOS transistor. Semiconductor material isepitaxially formed in the source/drain regions, so that an epitaxialsource/drain region of the MOS transistor abutting the field oxide mayhave a highly angled surface facet and a gap may exist between theepitaxial semiconductor material and the dielectric material of thefield oxide. A silicon dioxide-based gap filler is formed in the gapbetween the epitaxial semiconductor material and the dielectric materialof the field oxide. Source/drain spacers are subsequently formedadjacent to lateral surfaces of the MOS gate structure and the gatestructure on the field oxide. Metal silicide is formed on the exposedepitaxial semiconductor material. A conformal contact etch stop liner isformed over the MOS transistor and the gate structure on the fieldoxide. A contact is formed to the metal silicide on the epitaxialsource/drain region abutting the field oxide.

DESCRIPTION OF THE VIEWS OF THE DRAWING

FIG. 1 is a cross section of an example integrated circuit containing agap filler.

FIG. 2A through FIG. 2H are cross sections of the integrated circuit ofFIG. 1, depicted in successive stages of fabrication.

FIG. 3A through FIG. 3G are cross sections of another example integratedcircuit depicted in successive stages of fabrication.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

The present invention is described with reference to the attachedfigures. The figures are not drawn to scale and they are provided merelyto illustrate the invention. Several aspects of the invention aredescribed below with reference to example applications for illustration.It should be understood that numerous specific details, relationships,and methods are set forth to provide an understanding of the invention.One skilled in the relevant art, however, will readily recognize thatthe invention can be practiced without one or more of the specificdetails or with other methods. In other instances, well-known structuresor operations are not shown in detail to avoid obscuring the invention.The present invention is not limited by the illustrated ordering of actsor events, as some acts may occur in different orders and/orconcurrently with other acts or events. Furthermore, not all illustratedacts or events are required to implement a methodology in accordancewith the present invention.

An integrated circuit containing an MOS transistor abutting field oxideand a gate structure on the field oxide adjacent to a source/drainregion of the MOS transistor is formed by forming a patterned epitaxyhard mask layer over the MOS transistor and the gate structure on thefield oxide, which exposes the source/drain between the field oxide anda gate structure of the MOS transistor. Semiconductor material isepitaxially formed in the source/drain regions, so that an epitaxialsource/drain region of the MOS transistor abutting the field oxide mayhave a highly angled surface facet and a gap may exist between theepitaxial semiconductor material and the dielectric material of thefield oxide. A silicon dioxide-based gap filler is formed in the gapbetween the epitaxial semiconductor material and the dielectric materialof the field oxide.

In one example fabrication process sequence, a conformal layer ofsilicon dioxide-based dielectric material is formed over the integratedcircuit, extending into the gap between the epitaxial semiconductormaterial and the field oxide. Subsequently an isotropic etchback processremoves the silicon dioxide-based dielectric material from over the MOStransistor and the gate structure on the field oxide, leaving the gapfiller. Source/drain spacers which are predominantly non-silicon dioxideare formed adjacent to the gate structure of the MOS transistor and thegate structure on the field oxide which advantageously leave at leastone half of the epitaxial source/drain region of the MOS transistorabutting the field oxide exposed.

In another example fabrication process sequence, a silicon dioxide-basedfirst sublayer of source/drain spacers is conformally formed over theintegrated circuit, extending into the gap between the epitaxialsemiconductor material and the field oxide. Subsequently an anisotropicetchback process removes the first sublayer from tops surfaces of theMOS transistor and the gate structure on the field oxide, leaving firstsource/drain spacers adjacent to the gate structure of the MOStransistor and the gate structure on the field oxide. The first spaceron the gate structure on the field oxide extends into the gap betweenthe epitaxial semiconductor material and the field oxide, providing thegap filler. A silicon nitride-based second sublayer of the source/drainspacers is conformally formed over the integrated circuit. Ananisotropic etchback removes the second sublayer to leave siliconnitride-based second spacers. At least one third of the epitaxialsource/drain region of the MOS transistor abutting the field oxide isexposed.

Following formation of the gap filler, such as by either of the examplefabrication process sequences described above, metal silicide is formedon the exposed epitaxial source/drain region. A conformal contact etchstop layer (CESL) is formed over the integrated circuit and a pre-metaldielectric (PMD) layer is formed over the CESL. A contact is formedthrough the PMD layer and CESL to make an electrical connection to themetal silicide on the epitaxial source/drain region.

FIG. 1 is a cross section of an example integrated circuit containing agap filler. The integrated circuit 100 is formed in and on a substrate102 which includes semiconductor material 104 such as single crystalsilicon extending to a top surface of the substrate 102. Field oxide 106is formed in the substrate 102, for example using a STI process.

The integrated circuit 100 includes a first MOS transistor 108 having afirst polarity adjacent to the field oxide 106, a gate structure 110 onthe field oxide 106 adjacent to the first MOS transistor 108, and asecond MOS transistor 112 having a second, opposite, polarity. A topsurface 114 of the field oxide 106 is coplanar within 20 nanometers witha top surface 116 of the semiconductor material 104 under the first MOStransistor 108.

The first MOS transistor 108 includes a gate dielectric layer 118 at thetop surface of the semiconductor material 104. The gate dielectric layer118 may include silicon dioxide formed by thermal oxidation of thesemiconductor material 104. The gate dielectric layer 118 mayalternatively include deposited dielectric materials with highdielectric constants such as hafnium oxide, zirconium oxide and/ortantalum oxide. The first MOS transistor 108 includes a gate 120 overthe gate dielectric layer 118. The gate 120 may include polycrystallinesilicon, commonly referred to as polysilicon. The first MOS transistor108 may include gate offset spacers 122 on lateral surfaces of the gate120. The gate offset spacers 122 may include one or more layers ofthermal oxide, deposited silicon dioxide and/or deposited siliconnitride. The first MOS transistor 108 includes a first epitaxialsource/drain region 124 in the substrate 102 between the gate 120 andthe field oxide 106, such that the first epitaxial source/drain region124 abuts the field oxide 106. The first MOS transistor 108 alsoincludes a second epitaxial source/drain region 126 in the substrate 102adjacent to the gate 120 opposite from the first epitaxial source/drainregion 124. The first MOS transistor 108 includes source/drain spacers128 laterally adjacent to the gate 120 and abutting the gate offsetspacers 122 if present. The source/drain spacers 128 include one or morelayers of silicon nitride and/or silicon oxynitride or other non-silicondioxide dielectric material. The first MOS transistor 108 may include anoptional spacer liner 130 of silicon dioxide-based dielectric materialunder the source/drain spacers 128. The spacer liner 130 may be 3nanometers to 10 nanometers thick.

The gate structure 110 may possibly have a gate dielectric layer of thesame material as the gate dielectric layer 118 if the gate dielectriclayer 118 is a deposited dielectric layer which is concurrentlydeposited on the semiconductor material 104 and the field oxide 106. Ifthe gate dielectric layer 118 is, on the other hand, a thermally grownoxide layer which does not form on the field oxide 106, the gatestructure 110 may be free of a gate dielectric layer, as depicted inFIG. 1. The gate structure 110 includes a gate 132 over the field oxide106 and over the gate dielectric layer of the gate structure 110, ifpresent. In the instant example, the gate 132 does not overlap an edgeof the field oxide 106 adjacent to the first MOS transistor 108. Thegate 132 may have the same composition and structure as the gate 120 ofthe first MOS transistor 108. The gate structure 110 may include gateoffset spacers 134 on lateral surfaces of the gate 132 if the first MOStransistor 108 includes the gate offset spacers 122. The gate offsetspacers 134 may have a similar composition and structure as the gateoffset spacers 122 of the first MOS transistor 108. The gate structure110 includes source/drain spacers 136 laterally adjacent to the gate 132and abutting the gate offset spacers 134 if present. The source/drainspacers 136 have the same structure and composition as the source/drainspacers 128 of the first MOS transistor 108. The gate structure 110 mayinclude the spacer liner 130 if present in the first MOS transistor 108.

The second MOS transistor 112 includes a gate dielectric layer 138 atthe top surface of the semiconductor material 104. The gate dielectriclayer 138 may possibly have the same composition and structure as thegate dielectric layer 118 of the first MOS transistor 108. The secondMOS transistor 112 includes a gate 140 over the gate dielectric layer138. The gate 140 may possibly have a similar composition and structureas the gate 120 of the first MOS transistor 108. The second MOStransistor 112 may include gate offset spacers 142 on lateral surfacesof the gate 140. The gate offset spacers 142 may include one or morelayers of thermal oxide, deposited silicon dioxide and/or depositedsilicon nitride, and may possibly have a similar structure andcomposition as the gate offset spacers 122 of the first MOS transistor108. The second MOS transistor 112 includes source/drain spacers 144laterally adjacent to the gate 140 and abutting the gate offset spacers142 if present. The source/drain spacers 144 may possibly have the samestructure and composition as the source/drain spacers 128 of the firstMOS transistor 108. The second MOS transistor 112 may include the spacerliner 130 if present in the first MOS transistor 108.

The first epitaxial source/drain region 124 has an angled facet facingthe field oxide 106 and so is laterally separated from the field oxide106 at the top surface 114 of the field oxide 106, forming a gap 146between the first epitaxial source/drain region 124 and the field oxide106 which extends at least 20 nanometers down from the top surface 114.A silicon dioxide-based gap filler 148 is disposed in the gap 146abutting the field oxide 106 and extending down to and contacting thefirst epitaxial source/drain region 124 at a bottom of the gap 146. Inthe instant example, the gap filler 148 extends up to the source/drainspacers 136 of the gate structure 110, touching the spacer liner 130 ifpresent, or touching the source/drain spacers 136 if the spacer liner130 is not present.

Metal silicide 150 is disposed on the first epitaxial source/drainregion 124 and on the second epitaxial source/drain region 126.Additional metal silicide 150 may be disposed on source/drain regions ofthe second MOS transistor 112, on the gate 120 of the first MOStransistor 108, on the gate 132 of the gate structure 110 and on thegate 140 of the second MOS transistor 112. The metal silicide 150 on thefirst epitaxial source/drain region 124 extends into the gap 146 on theangled facet and covers at least one half of the first epitaxialsource/drain region 124. The metal silicide 150 may include, forexample, nickel silicide.

A CESL 152 is disposed over the first MOS transistor 108, the gatestructure 110 and the second MOS transistor 112. The CESL 152 ispredominantly non-silicon dioxide-based dielectric material such assilicon nitride, 10 nanometers to 30 nanometers thick. A PMD layer 154is disposed over the CESL 152. The PMD layer 154 may be silicondioxide-based dielectric material such as boron phosphorus silicateglass (BPSG). The PMD layer 154 may be planarized as depicted in FIG. 1,and may be, for example, 50 nanometers to 150 nanometers thick over thefirst MOS transistor 108, the gate structure 110 and the second MOStransistor 112.

A contact 156 is disposed through the PMD layer 154 and the CESL 152 tomake direct connection with the metal silicide 150 on the firstepitaxial source/drain region 124. The contact 156 may include a metalliner 158 of titanium and titanium nitride, and a fill metal 160 oftungsten. The gap filler 148 may prevent the gap 146 from being filledwith the source/drain spacers 136 and the CESL 152, thus advantageouslyallowing the metal silicide 150 to occupy a larger fraction of theangled facet of the first epitaxial source/drain region 124 and providea lower resistance connection between the contact 156 and the firstepitaxial source/drain region 124.

In one version of the instant example, the first MOS transistor 108 maybe a PMOS transistor 108, and the first epitaxial source/drain region124 and the second epitaxial source/drain region 126 may besilicon-germanium, and the second MOS transistor 112 may be an NMOStransistor 112. In an alternate version, the first MOS transistor 108may be an NMOS transistor 108, and the first epitaxial source/drainregion 124 and the second epitaxial source/drain region 126 may bephosphorus doped silicon, and the second MOS transistor 112 may be aPMOS transistor 112.

FIG. 2A through FIG. 2H are cross sections of the integrated circuit ofFIG. 1, depicted in successive stages of fabrication. Referring to FIG.2A, the integrated circuit 100 has completed formation of epitaxialsource/drain regions for transistors having the first polarity. Thefirst MOS transistor 108 has the gate dielectric layer 118, the gate120, the gate offset spacers 122 and the first epitaxial source/drainregion 124 and the second epitaxial source/drain region 126 in place.The gate structure 110 has the gate 132 and the gate offset spacers 134in place. The second MOS transistor 112 has the gate dielectric layer138, the gate 140 and the gate offset spacers 142 in place.

Gate hard mask material 162 may be disposed over the gates 120, 132 and142 from a gate etch operation. An epitaxy hard mask 164 is adjacent tolateral surfaces of the gate 120 of the first MOS transistor 108,adjacent to lateral surfaces of the gate 132 of the gate structure 110and covers the second MOS transistor 112. The epitaxy hard mask 164 mayinclude, for example, silicon nitride 15 nanometers to 25 nanometersthick. The epitaxy hard mask 164 was used to define lateral extents ofthe first epitaxial source/drain region 124 and the second epitaxialsource/drain region 126. The gap 146 between the first epitaxialsource/drain region 124 and the field oxide 106 is substantially free ofmaterial.

Referring to FIG. 2B, a gap fill layer 166 of silicon dioxide-baseddielectric material is formed over an existing top surface of theintegrated circuit 100, extending into and substantially filling the gap146. The gap fill layer 166 may include, for example, 15 nanometers to25 nanometers of silicon dioxide formed by a plasma enhanced chemicalvapor deposition (PECVD) process using tetraethyl orthosilicate, alsoknown as tetraethoxysilane or TEOS. The thickness of the gap fill layer166 is high enough to substantially fill the gap 146 and is low enoughto avoid completely filling between the gate 120 of the first MOStransistor 108 and the gate 132 of the gate structure 110.

Referring to FIG. 2C, the gap fill layer 166 of FIG. 2B is removed fromover the first MOS transistor 108, the gate structure 110 and the secondMOS transistor 112 to leave gap filler 148 substantially filling the gap146. The gap fill layer 166 may be removed, for example, using anisotropic plasma etch which is selective to the epitaxy hard mask 164,or possibly using a timed wet etch in an aqueous solution of dilutehydrofluoric acid.

Referring to FIG. 2D, the epitaxy hard mask 164 of FIG. 2C is removed,leaving the gap filler 148 substantially filling the gap 146. Theepitaxy hard mask 164 may be removed, for example, using an isotropicplasma etch which is selective to silicon dioxide. The gate hard maskmaterial 162 of FIG. 2C, if present, is also removed, possiblyconcurrently with the epitaxy hard mask 164, or possibly in a separateetch step. If the gate hard mask material 162 included amorphous carbon,it may be removed by ashing.

Referring to FIG. 2E, the optional spacer liner 130 may possibly beformed over an existing top surface of the integrated circuit 100. Thespacer liner 168 may be formed, for example, by a PECVD process usingTEOS.

A conformal layer of spacer material 168 is formed over the existing topsurface of the integrated circuit 100, on the spacer liner 130 ifpresent. The layer of spacer material 168 is predominantly non-silicondioxide material such as silicon nitride and/or silicon oxynitride. Thelayer of spacer material 168 may be formed by a PECVD process using bis(tertiary-butylamino) silane (BTBAS), a PECVD process using acombination of BTBAS and TEOS, or a PECVD process using dichlorosilaneand ammonia. The layer of spacer material 168 may be, for example, 15nanometers to 30 nanometers thick.

Referring to FIG. 2F, an anisotropic reactive ion etch (ME) processremoves the layer of spacer material 168 of FIG. 2E from over the gapfiller 148 and the first epitaxial source/drain region 124 and thesecond epitaxial source/drain region 126, and from over tops of thegates 120, 132 and 140, to form the source/drain spacers 128 laterallyadjacent to the gate 120 of the first MOS transistor 108, thesource/drain spacers 136 laterally adjacent to the gate 132 of the gatestructure 110, and the source/drain spacers 144 laterally adjacent tothe gate 140 of the second MOS transistor 112. The RIE process leavesthe gap filler 148 substantially intact.

Referring to FIG. 2G, a silicon dioxide etch removes the spacer liner130 which is exposed by the source/drain spacers 128, 136 and 144, andremoves a portion of the gap filler 148 so as to expose at least a halfof the first epitaxial source/drain region 124. The silicon dioxide etchmay include an RIE process or may include a timed etch in an aqueoussolution of dilute hydrofluoric acid. After the silicon dioxide etch iscompleted, the gap filler 148 abuts the field oxide 106 and extends downto and contacts the first epitaxial source/drain region 124 at a bottomof the gap 146, and extends up to the spacer liner 130.

Referring to FIG. 2H, the metal silicide 150 is formed on exposedsemiconductor material, including the first epitaxial source/drainregion 124 and the second epitaxial source/drain region 126, andpossibly the source/drain regions of the second MOS transistor 112. Themetal silicide 150 may also be formed over the gates 120, 132 and 140.The metal silicide 150 on the first epitaxial source/drain region 124extends into the gap 146 on the angled facet and covers at least onehalf of the first epitaxial source/drain region 124. The metal silicide150 may be formed, for example, by depositing a layer of metal, such asnickel or cobalt, on a top surface of the integrated circuit 100,heating the integrated circuit 100 to react a portion of the metal withthe exposed semiconductor material, and selectively removing unreactedmetal by exposing the integrated circuit 100 to wet etchants including amixture of an acid and hydrogen peroxide.

Following formation of the metal silicide 150, the CESL 152, PMD layer154 and contact 156 are formed to provide the structure of FIG. 1. TheCESL 152 may be formed, for example, by a PECVD process usingdichlorosilane and ammonia. The PMD layer 154 may be formed, forexample, by a PECVD process using silane, diborane, phosphine andnitrous oxide, or a high aspect ratio process (HARP) using silane,diborane, phosphine and ozone.

The contact 156 may be formed by etching a contact hole through the PMDlayer 154 and CESL 152 to expose the metal silicide 150. The metal liner158 of titanium and titanium nitride may be formed by a sputter processand an atomic layer deposition (ALD) process respectively. The fillmetal 160 of tungsten may be formed by a metal organic chemical vapordeposition (MOCVD) process. The fill metal 160 and the metal liner 158may be removed from a top surface of the PMD layer 154 by etchback orchemical mechanical polish (CMP) processes.

FIG. 3A through FIG. 3G are cross sections of another example integratedcircuit depicted in successive stages of fabrication. Referring to FIG.3A, the integrated circuit 300 is formed in and on a substrate 302 whichincludes semiconductor material 304 such as single crystal siliconextending to a top surface of the substrate 302. Field oxide 306 isformed in the substrate 302. The integrated circuit 300 includes a firstMOS transistor 308 having a first polarity adjacent to the field oxide306, a gate structure 310 on the field oxide 306 adjacent to the firstMOS transistor 308, and a second MOS transistor 312 having a second,opposite, polarity. A top surface 314 of the field oxide 306 is coplanarwithin 20 nanometers with a top surface 316 of the semiconductormaterial 304 under the first MOS transistor 308. The integrated circuit300 has completed formation of epitaxial source/drain regions fortransistors having the first polarity. An epitaxy hard mask and any gatehard mask material have been removed.

The first MOS transistor 308 includes a gate dielectric layer 318 at thetop surface of the semiconductor material 304. The gate dielectric layer318 may include silicon dioxide formed by thermal oxidation of thesemiconductor material 304, or may include deposited dielectricmaterials with high dielectric constants. The first MOS transistor 308includes a gate 320, possibly polysilicon, over the gate dielectriclayer 318. Gate offset spacers 322 may be disposed on lateral surfacesof the gate 320. The first MOS transistor 308 includes a first epitaxialsource/drain region 324 in the substrate 302 between the gate 320 andthe field oxide 306, such that the first epitaxial source/drain region324 abuts the field oxide 306, and a second epitaxial source/drainregion 326 in the substrate 302 adjacent to the gate 320 opposite fromthe first epitaxial source/drain region 324. The first epitaxialsource/drain region 324 has an angled facet facing the field oxide 306and so is laterally separated from the field oxide 306 at the topsurface 314 of the field oxide 306, forming a gap 346 between the firstepitaxial source/drain region 324 and the field oxide 306 which extendsat least 20 nanometers down from the top surface 314.

The gate structure 310 may possibly have a gate dielectric layer of thesame material as the gate dielectric layer 318 as explained in referenceto FIG. 1. The gate structure 310 includes a gate 332 over the fieldoxide 306; in the instant example, the gate 332 does not overlap an edgeof the field oxide 306 adjacent to the first MOS transistor 308. Thegate 332 may have the same composition and structure as the gate 320 ofthe first MOS transistor 308. Gate offset spacers 334 may be disposed onlateral surfaces of the gate 332.

The second MOS transistor 312 includes a gate dielectric layer 338 atthe top surface of the semiconductor material 304, possibly having thesame composition and structure as the gate dielectric layer 318 of thefirst MOS transistor 308. The second MOS transistor 312 includes a gate340 over the gate dielectric layer 338, possibly with a similarcomposition and structure as the gate 320 of the first MOS transistor308. Gate offset spacers 342 may be disposed on lateral surfaces of thegate 340. The gate offset spacers 342 may possibly have a similarstructure and composition as the gate offset spacers 322 of the firstMOS transistor 308.

A silicon dioxide-based spacer layer 370 of subsequently formedsource/drain spacers is conformally formed over an existing top surfaceof the integrated circuit 300, extending into, and substantiallyfilling, the gap 346. The spacer layer 370 may include, for example, 15nanometers to 30 nanometers of silicon dioxide formed by a PECVD processusing TEOS. The thickness of the spacer layer 370 is high enough tosubstantially fill the gap 346 and is low enough to avoid completelyfilling between the gates 320 and 332.

Referring to FIG. 3B, an anisotropic RIE process removes the spacerlayer 370 of FIG. 3A from over a portion of the first epitaxialsource/drain region 324 and from over the second epitaxial source/drainregion 326, and from over tops of the gates 320, 332 and 340, to formsource/drain spacers 328 laterally adjacent to the gate 320 of the firstMOS transistor 308, source/drain spacers 336 laterally adjacent to thegate 332 of the gate structure 310, and source/drain spacers 344laterally adjacent to the gate 340 of the second MOS transistor 312. TheRIE process is performed so that the source/drain spacer 328 extendsinto the gap 346, abutting the field oxide 306 and extending down to andcontacting the first epitaxial source/drain region 324 at a bottom ofthe gap 346, thus providing a gap filler 348.

Referring to FIG. 3C, a non-silicon dioxide-based sacrificial layer 372is conformally formed over an existing top surface of the integratedcircuit 300. The sacrificial layer 372 may be, for example, 10nanometers to 30 nanometers thick, and may be formed by a PECVD processusing BTBAS, a PECVD process using a combination of BTBAS and TEOS, or aPECVD process using dichlorosilane and ammonia.

Referring to FIG. 3D, an anisotropic RIE process removes the sacrificiallayer 372 of FIG. 3C from over a portion of the first epitaxialsource/drain region 324 and a portion of the second epitaxialsource/drain region 326, and from over tops of the gates 320, 332 and340, to form sacrificial spacers 374 on the source/drain spacers 328 ofthe first MOS transistor 308, sacrificial spacers 376 on thesource/drain spacers 328 of the gate structure 310, and sacrificialspacers 378 on the source/drain spacers 328 of the second MOS transistor312. Forming the source/drain spacers 336 on the gate structure 310 soas to extend into the gap 346, providing the gap filler 348, may reducea thickness of the sacrificial spacers 376 over the first epitaxialsource/drain region 324, thereby exposing sufficient area for subsequentformation of metal silicide.

Referring to FIG. 3E, metal silicide 350 is formed on exposedsemiconductor material, including the first epitaxial source/drainregion 324 and the second epitaxial source/drain region 326, andpossibly the source/drain regions of the second MOS transistor 312. Themetal silicide 350 may also be formed over the gates 320, 332 and 340.The metal silicide 350 on the first epitaxial source/drain region 324extends into the gap 346 on the angled facet and covers at least onethird of the first epitaxial source/drain region 324. The metal silicide350 may be formed, for example, as described in reference to FIG. 2H.

Referring to FIG. 3F, the sacrificial spacers 374, 376 and 378 of FIG.3E are removed, for example using an isotropic plasma etch which isselective to the silicon-dioxide-based dielectric material of thesource/drain spacers 328, 336 and 344. The gap filler 348 issubstantially intact after the sacrificial spacers 374, 376 and 378 areremoved.

Referring to FIG. 3G, a first sublayer 380 of a CESL 352 is formed overan existing top surface of the integrated circuit 300. The firstsublayer 380 includes 2 nanometers to 10 nanometers of silicondioxide-based dielectric material, formed by a PECVD process. A secondsublayer 382 of the CESL 352 is formed on the first sublayer 380. Thesecond sublayer 382 is predominantly non-silicon dioxide-baseddielectric material such as silicon nitride, 10 nanometers to 30nanometers thick, formed by a PECVD process. A PMD layer 354 is formedover the CESL 352, for example as described in reference to FIG. 1 andFIG. 2H. A contact 356 is formed through the PMD layer 354 and CESL 352to make direct connection with the metal silicide 350 on the firstepitaxial source/drain region 324. The contact 356 may be formed asdescribed in reference to FIG. 2H.

While various embodiments of the present invention have been describedabove, it should be understood that they have been presented by way ofexample only and not limitation. Numerous changes to the disclosedembodiments can be made in accordance with the disclosure herein withoutdeparting from the spirit or scope of the invention. Thus, the breadthand scope of the present invention should not be limited by any of theabove described embodiments. Rather, the scope of the invention shouldbe defined in accordance with the following claims and theirequivalents.

What is claimed is:
 1. An integrated circuit, comprising: a substratecomprising semiconductor material extending to a top surface of thesubstrate; field oxide disposed in the substrate; a first metal oxidesemiconductor (MOS) transistor of a first polarity, comprising: a gatedielectric layer at the top surface of the semiconductor material; agate over the gate dielectric layer of the first MOS transistor; a firstsource/drain region in the substrate between the gate of the first MOStransistor and the field oxide, abutting the field oxide, having anangled facet facing the field oxide such that the first source/drainregion is laterally separated from the field oxide at a top surface ofthe field oxide by a gap which extends at least 20 nanometers down fromthe top surface of the field oxide; a second source/drain region in thesubstrate adjacent to the gate of the first MOS transistor, oppositefrom the first source/drain region; and source/drain spacers laterallyadjacent to the gate of the first MOS transistor; a gap filler ofsilicon dioxide-based dielectric material in the gap, abutting the fieldoxide and extending down to and contacting the first source/drain regionat a bottom of the gap; metal silicide on the angled facet of the firstsource/drain region; and a contact on the metal silicide on the angledfacet of the first source/drain region.
 2. The integrated circuit ofclaim 1, wherein a top surface of the field oxide is coplanar within 20nanometers of the top surface of the substrate under the gate dielectriclayer.
 3. The integrated circuit of claim 1, wherein the source/drainspacers of the gate structure are predominantly non-silicon dioxidedielectric material, and the metal silicide covers at least one half ofthe first source/drain region.
 4. The integrated circuit of claim 3,further comprising a spacer liner of silicon dioxide-based dielectricmaterial under the source/drain spacers of the first MOS transistor andthe source/drain spacers of the gate structure.
 5. The integratedcircuit of claim 1, wherein the source/drain spacers of the gatestructure are predominantly silicon dioxide-based dielectric material,the gap filler is a portion of the source/drain spacers of the gatestructure, and the metal silicide covers at least one third of the firstsource/drain region.
 6. The integrated circuit of claim 1, wherein themetal silicide is predominantly nickel silicide.
 7. The integratedcircuit of claim 1, further comprising a second MOS transistor of asecond, opposite, polarity.
 8. The integrated circuit of claim 1,wherein: the first MOS transistor is a p-channel metal oxidesemiconductor (PMOS) transistor; and the first source/drain region andthe second source/drain region comprise silicon-germanium.
 9. Theintegrated circuit of claim 1, wherein: the first MOS transistor is ann-channel metal oxide semiconductor (NMOS) transistor; and the firstsource/drain region and the second source/drain region comprisephosphorus doped silicon.
 10. An integrated circuit, comprising: asubstrate comprising semiconductor material extending to a top surfaceof the substrate; field oxide disposed in the substrate; a first metaloxide semiconductor (MOS) transistor of a first polarity, comprising: agate dielectric layer at the top surface of the semiconductor material;a gate over the gate dielectric layer of the first MOS transistor; afirst source/drain region in the substrate between the gate of the firstMOS transistor and the field oxide, abutting the field oxide, having anangled facet facing the field oxide such that the first source/drainregion is laterally separated from the field oxide at a top surface ofthe field oxide by a gap which extends down from the top surface of thefield oxide; a second source/drain region in the substrate adjacent tothe gate of the first MOS transistor, opposite from the firstsource/drain region; and source/drain spacers laterally adjacent to thegate of the first MOS transistor; a second MOS transistor of a secondpolarity; a gate structure over the field oxide, comprising: a gate overthe field oxide, such that the gate does not overlap an edge of thefield oxide between the gate structure and the first MOS transistor; andsource/drain spacers laterally adjacent to the gate of the gatestructure; a gap filler of silicon dioxide based dielectric material inthe gap, abutting the field oxide and extending down to and contactingthe first source/drain region at a bottom of the gap; metal silicide onthe angled facet of the first source/drain region; and a contact on themetal silicide on the angled facet of the first source/drain region. 11.The integrated circuit of claim 10, wherein the metal silicide covers atleast one half of the first source/drain region.
 12. The integratedcircuit of claim 10, further comprising a spacer liner of silicondioxide-based dielectric material under the source/drain spacers of thefirst MOS transistor and the source/drain spacers of the gate structure.13. The integrated circuit of claim 10, wherein the source/drain spacersof the gate structure are predominantly silicon dioxide-based dielectricmaterial, the gap filler is a portion of the source/drain spacers of thegate structure, and the metal silicide covers at least one third of thefirst source/drain region.
 14. The integrated circuit of claim 10,wherein the metal silicide is predominantly nickel silicide.
 15. Theintegrated circuit of claim 10, wherein: the first MOS transistor is ap-channel metal oxide semiconductor (PMOS) transistor; and the firstsource/drain region and the second source/drain region comprisesilicon-germanium.
 16. The integrated circuit of claim 10, wherein: thefirst MOS transistor is an n-channel metal oxide semiconductor (NMOS)transistor; and the first source/drain region and the secondsource/drain region comprise phosphorus doped silicon.
 17. An integratedcircuit, comprising: a substrate comprising semiconductor materialextending to a top surface of the substrate; field oxide disposed in thesubstrate; a p-type metal oxide semiconductor (PMOS) transistor,comprising: a gate dielectric layer at the top surface of thesemiconductor material; a gate over the gate dielectric layer of thePMOS transistor; a first silicon germanium (SiGe) source/drain region inthe substrate between the gate of the PMOS transistor and the fieldoxide, abutting the field oxide, having an angled facet facing the fieldoxide such that the first SiGe source/drain region is laterallyseparated from the field oxide at a top surface of the field oxide by agap which extends at least 20 nanometers down from the top surface ofthe field oxide; a second SiGe source/drain region in the substrateadjacent to the gate of the PMOS transistor, opposite from the firstSiGe source/drain region; and source/drain spacers laterally adjacent tothe gate of the PMOS transistor; a gap filler of silicon dioxide-baseddielectric material in the gap, abutting the field oxide and extendingdown to and contacting the first SiGe source/drain region at a bottom ofthe gap; metal silicide on a portion of the angled facet of the firstSiGe source/drain region; and a contact on the metal silicide on theangled facet of the first SiGe source/drain region.